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| ? ! " #!$!% !&'(() % # * # + , + - &# + # , # , # ,+ , ! ? power management in notebook computer, portable equipment and battery powered systems apm2700c handling code temp. range package code package code c : sot-26 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm2700c c : m70x xxxxx - date code lead free code top view of sot-26 ? n-channel 20v/1.8a, r ds(on) =170m ? (typ.) @ v gs =4.5v r ds(on) =270m ? (typ.) @ v gs =2.5v ? ? ? ? ? p-channel -20v/-1.2a, r ds(on) =360m ? (typ.) @ v gs =-4.5v r ds(on) =530m ? (typ.) @ v gs =-2.5v ? ? ? ? ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? lead free available (rohs compliant) n-channel mosfet p-channel mosfet g2 s2 d2 (4) (2) (3) (6) (1) (5) s1 d1 g1 note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature. ? ! " #!$!% !&'(() ' (t a = 25 c unless otherwise noted) ! " (t a = 25 c unless otherwise noted) note: *surface mounted on 1in 2 pad area, t 10sec. symbol parameter n channel p channel unit v dss drain-source voltage 20 -20 v gss gate-source voltage 8 8 v i d * continuous drain current 1.8 -1.2 i dm * 300 s pulsed drain current v gs =4.5v 6 -5 a i s * diode continuous forward current 1 -1 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25 c 0.83 p d * power dissipation t a =100 c 0.3 w r ja * thermal resistance-junction to ambient 150 c/w apm2700c symbol parameter test condition min. typ. max. unit static characteristics v gs =0v, i ds =250 a n-ch 20 bv dss drain-source breakdown voltage v gs =0v, i ds =-250 a p-ch -20 v v ds =16v, v gs =0v 1 t j =85 c n-ch 30 v ds =-16v, v gs =0v -1 i dss zero gate voltage drain current t j =85 c p-ch -30 a v ds =v gs , i ds =250 a n-ch 0.45 0.6 1.2 v gs(th) gate threshold voltage v ds =v gs , i ds =-250 a p-ch -0.45 -0.6 -1.2 v v gs =8v, v ds =0v n-ch 2 a i gss gate leakage current v gs =8v, v ds =0v p-ch 100 na v gs =4.5v, i ds =1.8a n-ch 170 220 v gs =-4.5v, i ds =-1.2a p-ch 360 470 v gs =2.5v, i ds =0.9a n-ch 270 350 r ds(on) a drain-source on-state resistance v gs =-2.5v, i ds =-0.7a p-ch 530 690 m ? ? ! " #!$!% !&'(() . apm2700c symbol parameter test condition min. typ. max. unit static characteristics (cont.) i sd =0.5a, v gs =0v n-ch 0.8 1.3 v sd a diode forward voltage i sd =-0.5a, v gs =0v p-ch -0.8 -1.3 v dynamic characteristics b n-ch 130 c iss input capacitance p-ch 140 n-ch 25 c oss output capacitance p-ch 40 n-ch 15 c rss reverse transfer capacitance n-channel v gs =0v, v ds =20v, frequency=1.0mhz p-channel v gs =0v, v ds =-20v, frequency=1.0mhz p-ch 30 pf n-ch 2 4 t d(on) turn-on delay time p-ch 3 6 n-ch 17 32 t r turn-on rise time p-ch 18 33 n-ch 4 8 t d(off) turn-off delay time p-ch 10 19 n-ch 18 33 t f turn-off fall time n-channel v dd =10v, r l =10 ? , i ds =1a, v gen =4.5v, r g =6 ? p-channel v dd =-10v, r l =10 ? , i ds =-1a, v gen =-4.5v, r g =6 ? p-ch 20 37 ns gate charge characteristics b n-ch 4.2 5.5 q g total gate charge p-ch 7 9 n-ch 0.6 q gs gate-source charge p-ch 1.1 n-ch 0.6 q gd gate-drain charge n-channel v ds =10v, v gs =4.5v, i ds =1.8a p-channel v ds =-10v, v gs =-4.5v, i ds =-1.2a p-ch 1.1 nc notes: a : pulse test ; pulse width 300 s, duty cycle 2 %. b : guaranteed by design, not subject to production testing. ! " # $% (t a = 25 c unless otherwise noted) ? ! " #!$!% !&'(() / 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 150 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 &' " i d - drain current (a) drain current t j - junction temperature ( c) safe operation area v ds - drain - source voltage (v) thermal transient impedance square wave pulse duration (sec) power dissipation p tot - power (w) t j - junction temperature ( c) i d - drain current (a) n-channel 0 20406080100120140160 0.0 0.2 0.4 0.6 0.8 1.0 0 20406080100120140160 0.0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 50 0.02 0.1 1 10 20 rds(on) limit 1s t a =25 o c 10ms 300 s 1ms 100ms dc normalized transient thermal resistance ? ! " #!$!% !&'(() ) r ds(on) - on - resistance (m ? ) drain-source on resistance i d - drain current (a) t j - junction temperature ( c) gate threshold voltage v ds - drain - source voltage (v) i d - drain current (a) output characteristics transfer characteristics v gs - gate - source voltage (v) i d - drain current (a) normalized threshold voltage &' " # $% 0.0 0.8 1.6 2.4 3.2 4.0 0 1 2 3 4 5 6 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 i ds =250 a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 2.5v 2v 3v 1.5v v gs = 4,5,6,7,8,9,10v n-channel 0123456 100 150 200 250 300 350 v gs =2.5v v gs =4.5v ? ! " #!$!% !&'(() 0 v ds - drain - source voltage (v) drain-source on resistance normalized on resistance t j - junction temperature ( c) c - capacitance (pf) v sd - source - drain voltage (v) source-drain diode forward i s - source current (a) capacitance gate charge q g - gate charge (nc) v gs - gate - source voltage (v) &' " # $% -50 -25 0 25 50 75 100 125 150 0.50 0.75 1.00 1.25 1.50 1.75 v gs = 4.5v i ds = 1.8a r on @t j =25 o c: 170m ? 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 6 t j =150 o c t j =25 o c 0 4 8 121620 0 40 80 120 160 200 frequency=1mhz crss coss ciss 012345 0 1 2 3 4 5 v ds =10v i ds =1.8a n-channel ? ! " #!$!% !&'(() 1 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 150 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 &' " -i d - drain current (a) drain current t j - junction temperature ( c) safe operation area -v ds - drain - source voltage (v) thermal transient impedance square wave pulse duration (sec) power dissipation p tot - power (w) t j - junction temperature ( c) -i d - drain current (a) p-channel 0 20406080100120140160 0.0 0.2 0.4 0.6 0.8 1.0 0 20406080100120140160 0.0 0.3 0.6 0.9 1.2 1.5 0.1 1 10 50 0.01 0.1 1 10 20 rds(on) limit 1s t a =25 o c 10ms 300 s 1ms 100ms dc normalized transient thermal resistance ? ! " #!$!% !&'(() 2 r ds(on) - on - resistance (m ? ) drain-source on resistance -i d - drain current (a) t j - junction temperature ( c) gate threshold voltage -v ds - drain - source voltage (v) -i d - drain current (a) output characteristics transfer characteristics -v gs - gate - source voltage (v) -i d - drain current (a) normalized threshold voltage &' " # $% 01234 0 2 4 6 8 10 -4v -2v -3v v gs = -5,-6,-7,-8,-9,-10v 01234 0 1 2 3 4 5 6 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 i ds =-250 a 0123456 100 200 300 400 500 600 700 800 v gs = -2.5v v gs = -4.5v p-channel ? ! " #!$!% !&'(() 3 -v ds - drain - source voltage (v) drain-source on resistance normalized on resistance t j - junction temperature ( c) c - capacitance (nc) -v sd - source - drain voltage (v) source-drain diode forward -i s - source current (a) capacitance gate charge q g - gate charge (nc) -v gs - gate - source voltage (v) &' " # $% -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 360m ? v gs = -4.5v i ds = -1.2a 0 4 8 121620 0 50 100 150 200 250 frequency=1mhz crss coss ciss 012345678 0 1 2 3 4 5 v ds = -10v i ds = -1.2a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.3 1 6 t j =150 o c t j =25 o c p-channel ? ! " #!$!% !&'(() %( sot-23-6 millimeters inches dim min. max. min. max. a 1.00 1.45 0.0394 0.0571 a1 0.00 0.15 0.0000 0.0591 a2 0.70 1.25 0.0276 0.0492 b 0.35 0.55 0.0138 0.0217 d 2.70 3.10 0.1063 0.1220 e 1.40 1.80 0.50551 0.0709 e 1.90 bsc 0.07480 bsc h 2.60 3.00 0.1024 0.1181 l 0.30 - 000118 - l1 0.08 0.25 0.0031 0.0098 l2 0.60 ref 0.024 ref 0 10 0 10 s1 0.85 1.05 0.0335 0.0413 d e h 123 4 6 s1 d a2 a a1 l2 l l1 e 5 ? ! " #!$!% !&'(() %% terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p ( (ir/convection or vpr reflow) ( "' ) profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature max (tsmax) time (min to max) (ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: temperature (t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak/classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface. ? ! " #!$!% !&'(() %' & * t ao e w po p ko bo d1 d f p1 test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles '& table 1. snpb entectic process ? package peak reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 <2.5 mm 240 +0/-5 c 225 +0/-5 c 2.5 mm 225 +0/-5 c 225 +0/-5 c table 2. pb-free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. ( # $% ? ! " #!$!% !&'(() %. ) + anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 + & application carrier width cover tape width devices per reel sot-23-6 8 5.3 3000 & * # $% a j b t2 t1 c application a b c j t1 t2 w p e 178 1 72 1.0 13.0 + 0.2 2.5 0.15 8.4 2 1.5 0.3 8.0+ 0.3 - 0.3 4 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sot-23-6 3.5 0.05 1.5 +0.1 1.5 +0.1 4.0 0.1 2.0 0.1 3.15 0.1 3.2 0.1 1.4 0.1 0.2 0.03 (mm) |
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